Effects of Oxygen Partial Pressure and Thermal Annealing on the Electrical Properties and High-Temperature Stability of Pt Thin-Film Resistors
نویسندگان
چکیده
The effects of oxygen partial pressure and annealing temperature on the microstructure, electrical properties, film adhesion Pt thin-film resistors with PtxOy as layer were investigated. Pt/PtxOy films deposited alumina substrates by radio frequency sputtering annealed in a muffle furnace at temperatures range 800–1000 °C. microstructure chemical composition examined optical microscopy, scanning electron X-ray photoelectron spectroscopy, time-of-flight secondary ion mass spectrometry. experimental results show that will lead to formation bubbles surface film, prepared 20% has least bubbles. sputtered 10% had highest TCR (temperature coefficient resistance) 3434 ppm/°C, increased increasing temperature. Repeated experiments have better stability 800 °C 900 Comprehensively considering stability, optimal was an
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ژورنال
عنوان ژورنال: Chemosensors
سال: 2023
ISSN: ['2227-9040']
DOI: https://doi.org/10.3390/chemosensors11050285